inchange semiconductor isc product specification isc silicon npn power transistor BU4530AL description collector-emitter sustaining voltage- : v ceo(sus) = 800v(min) high switching speed applications designed for use in horizontal def lection circuit s of color tv rceivers and pc monitors. absolute maximum ratings(t a =25 ) symbol parameter value unit v ces collector-emitter voltage 1500 v v ceo collector-emitter voltage 800 v v ebo emitter-base voltage 7.5 v i c collector current-continuous 16 a i cm collector current-peak 40 a i b b base current-continuous 10 a i bm base current-peak 15 a p c collector power dissipation @t c =25 125 w t j junction temperature 150 t stg storage temperature range -55~150 thermal characteristics symbol parameter max unit r th j-c thermal resistance,junction to case 1.0 /w isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistor BU4530AL electrical characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c = 100ma; i b = 0; l= 25mh 800 v v (br)ebo emitter-base breakdown voltage i e = 1ma; i c = 0 7.5 v v ce (sat) collector-emitter saturation voltage i c = 10a ;i b = 2.22a 3.0 v v be (sat) base-emitter saturation voltage i c = 10a ;i b = 2.22a 1.01 v i ces collector cutoff current v cev =1500v,v be (off) =0 v cev =1500v,v be (off) =0;t c =125 1.0 2.0 ma h fe-1 dc current gain i c = 1a ; v ce = 5v 12 h fe-2 dc current gain i c = 10a ; v ce = 5v 4.8 8.5 switching times; resistive load t s storage time 4.0 s t f fall time i c = 9a; i b1 = 1.8a; i b2 = -4.5a 0.26 s isc website www.iscsemi.cn
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